Sadhishkumar Balakrishnan

Extinction Ratio,Silicon Photonics,Electro-absorption Modulator,16-nm FinFET,Capacitive Coupling,Dark Current,Insertion Loss,Mach-Zehnder Modulator,Optical Link,Optical Modes,Quantum-confined Stark Effect,Waveguide,Activation Energy,Analog-to-digital Converter,Bandwidth Requirements,Batch Of Samples,Bias Voltage,Bit Error,Bit Error Rate,Coupling Coefficient,Cryogenic Temperatures,Dark Energy,Data Throughput,Electric Field Strength,Electro-optic Modulator,Energy-dispersive X-ray Spectroscopy,External Laser,Field Strength,Forward Error Correction,Function Of Temperature,High Growth Temperature,I-V Curves,Incubation Time,Independent Control,Inductive Load,Inter-symbol Interference,Inverter,Laser Power,Low Insertion Loss,Metal Layer,Network Bandwidth,Noise Floor,Noise Performance,Optical Attenuation,Optical Bandwidth,Optical Interconnects,Optical Loss,Optical Path,Optical Technology,Part Of Layer,