N. Baboux

Atomic Layer Deposition,Al2O3 Layer,Atomic Force Microscopy,Fabrication Process,Indium Oxide,Non-volatile Memory,Random Access Memory,Resistive Random Access Memory,Asymmetric Structure,Bias Voltage,Bipolar Switching,Charge Measurements,Circuit Design,Data Retention,Deposition Process,Dielectric Constant,Displacement Current,Electrical Characteristics,Electrode,Energy Band Diagram,Energy Change,Ferroelectric Field-effect Transistor,Ferroelectric Films,Ferroelectric Materials,Ferroelectric Polarization,Ferroelectric Switching,Free Energy,Free Energy Change,Gate Capacitance,Gate Dielectric,High Ratio,High Resistance State,I-V Curves,Indium Oxide Nanoparticles,Large Electrode,Low Capacity,Low Field,Oxide Layer,Positive Pulse,Remnant Polarization,Resistance Behavior,Resistance Measurements,Resistance State,Resistive Switching,Resistive Switching Behavior,Single-electron Transistor,Size Dispersion,Supply Function,Switching Behavior,Thin Films,