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V. Ancarani
Also published under:Valentina Ancarani
Affiliation
STMicroelectronics, FMG, Catania, Italy
Topic
Threshold Voltage,Chemical Vapor Deposition,Flash Memory,Threshold Voltage Shift,Charge Trapping,Data Retention,Hot Electrons,Memory Cells,Negatively Charged,Nitride Layer,Subthreshold Slope,Charge Storage,Conventional Memory,Cycling,Dot Density,Electrical Stress,Fin Height,Gate Oxide,Ionizing Radiation,Irradiation Device,Loss Of Charge,Non-volatile Memory,Oxide Thickness,Voltage-gated,Amount Of Charge,Appreciable Change,Aspect Ratio,Buffered Oxide Etchant,Capacitive Coupling,Channel Length,Charge Migration,Charge Neutrality,Charge Pump,Circuitry,Cross-sectional TEM,Device Gate,Double Hit,Double-gate,Drain Current,Effects Of Radiation,Electrical Characteristics,Electron Injection,Failure Analysis,Field Region,FinFET Architecture,Final Width,Flash Device,Focused Ion Beam,Fractional Cover,Function Of Fluence,
Biography
Valentina Ancarani received the degree in chemistry from the University of Catania, Catania, Italy, in 1995.
From 1995 to 1999, she received several grants from the Instituto Nazionale di Fisica della Materia (INFM) in Pisa, Italy and in Catania, working on the synthesis and characterization of materials. In 1999, she joined the Central R&D Group of STMicroelectronics (STM), Catania, Italy. She is currently with the Flash Memory Group-R&D, STM. At STM, she has worked in the field of dry etching and in the field of the device characterization. Her activities are now focused in the development of finFET-based nanoscale memories.
From 1995 to 1999, she received several grants from the Instituto Nazionale di Fisica della Materia (INFM) in Pisa, Italy and in Catania, working on the synthesis and characterization of materials. In 1999, she joined the Central R&D Group of STMicroelectronics (STM), Catania, Italy. She is currently with the Flash Memory Group-R&D, STM. At STM, she has worked in the field of dry etching and in the field of the device characterization. Her activities are now focused in the development of finFET-based nanoscale memories.