Peter Ayliffe

Also published under:P. J. Ayliffe, P. Ayliffe

Affiliation

Nano Group, Electronic & Computer Science, University of Southampton, Southampton, United Kingdom

Topic

Electron Beam Lithography,Silicon Wafer,Alignment Accuracy,Amount Of Shift,Attenuation Length,BEAMing,Broadband,Central Field,Colloidal Metal,Conductive,Dipole Structure,Doped Samples,Excited State Lifetime,Fast Decay,Film Thickness,Fluorescence Lifetime,Fluorescence Spectra,Height Error,Height Map,Important Error,Index Contrast,Indium Tin Oxide,Inductive Load,Laser Action,Lattice Directions,Low Loss,Magnetron Sputtering,Metal Film,Methyl Isobutyl Ketone,Oscillator Strength,Output Coupler,Photonic Bandgap,Photonic Crystal Structure,Plasma-enhanced Chemical Vapor Deposition,Plasmonic Nanoantennas,Propagation Loss,Pump Beam,Pump Power,Radio Frequency Magnetron Sputtering,Raman Scattering,Reactive Ion Etching,Rectangular Waveguide,Redshift,Secondary Ion Mass Spectrometry,Size Parameters,Slope Efficiency,Slow Light,Square Lattice,Surface Plasmon,Surface-enhanced Raman Scattering,

Biography

Peter Ayliffe was born in Worcester, U.K., in 1957. He received the B.Sc. (first class hons.) in physics from Queen Mary College, London, U.K., in 1978.
He worked for 11 years in liquid crystal display research at Standard Telecommunication Laboratories, Harlow, U.K., before moving into optical communications research with Nortel Networks. He joined Mesophotonics Ltd., Southampton, U.K., in 2002 and is currently working on nanoscale process development.