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Dimitri Antoniadis
Also published under:D. A. Antoniadis, Dimitri A. Antoniadis, D. Antoniadis
Affiliation
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
Hwaseong-si, Gyeonggi-do, Republic of Korea
Hwaseong-si, Gyeonggi-do, Republic of Korea
Topic
Domain Wall,Ferroelectric Materials,Negative Capacitance,Negative Slope,Opposite Polarity,Pulse Generator,Remanent Polarization,Voltage Amplitude,Atomic Layer Deposition,Basic Components,Bipolar Pulses,Bipolar Switching,Broad Range Of Conditions,CMOS Logic,CMOS Logic Circuits,Capacity Of Devices,Charge Density,Charged Residues,Charging Voltage,Circuit Design,Circuit Simulation,Coercive Field,Compact Size,Critical Time,DC Motor,Dead Layer,Depletion Mode,Digital Circuits,Discrete-time,Displacement Current,Domain Nucleation,Driver Circuit,Dynamic Response,Electric Field Changes,Electrode Materials,Electrothermal Analysis,Experimental Circuit,External Resistance,Ferroelectric Films,Field Changes,Function Of Time,Gallium Nitride,Gate Stack,Grazing Incidence X-ray Diffraction,Heaviside Function,High Level Of Integration,High Output Voltage,High Torque,High Voltage,High-voltage System,
Biography
Dimitri A. Antoniadis (LF’14) received the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, USA, in 1972 and 1976, respectively.
He joined the MIT Faculty in 1978 and is currently the Ray and Maria Stata Professor of electrical engineering. His current research interests include the technology and modeling of nanoscale electronic devices in Si, Ge, and III–V materials.
He joined the MIT Faculty in 1978 and is currently the Ray and Maria Stata Professor of electrical engineering. His current research interests include the technology and modeling of nanoscale electronic devices in Si, Ge, and III–V materials.