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I. Åberg
Also published under:Ingvar Aberg, I. Aberg
Affiliation
NoblePeak Vision Corporation, Wakefield, MA, U.S.A.
Topic
Dark Current,Epitaxial,Image Sensor,Quantum Efficiency,Shortwave Infrared,Analog Output,Aperture,Array Images,Band Gap,Blackbody,Body Thickness,Broadband Response,CMOS Process,CMOS Technology,Camera Operator,Capacitance Voltage,Carrier Mobility,Cross-sectional Transmission Electron Microscopy,Current Voltage,Dark Noise,Depletion Region,Dielectric Surface,Digital Domain,Direct Gap,Drain Source,Effective Mobility,Electron Transport,Fill Factor,Flicker Noise,Function Of Thickness,Gate Length,Gate Oxide,Gate Region,High-volume Production,Illumination,Image Chips,Microlenses,Mobility Enhancement,Night Images,Night Sky,Night Vision,Passive Imaging,Photodiode,Pixel Array,Power Meter,Shortwave Infrared Images,Silicon Wafer,Small Band Gap,Thermal Budget,Thermal Expansion,
Biography
Ingvar Åberg was born in 1976 in Västerås, Sweden. He received the M.S. degree in engineering physics from Lund University, Sweden, in 2001. He is currently working toward the Ph.D. degree in electrical engineering and computer science at the Massachusetts Institute of Technology (MIT), Cambridge. His Ph.D. work focuses on transport in ultrathin-channel strained Si-on-insulator (SOI) and strained Si/SiGe heterostructure-on-insulator (HOI) MOSFETs, with particular emphasis on improvement of hole mobility in such structures.
Mr. Åberg is a member of the Electrochemical Society, and is a Student Member of the Electron Devices Society.
Mr. Åberg is a member of the Electrochemical Society, and is a Student Member of the Electron Devices Society.