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Bruce W. Alphenaar
Also published under:Bruce Alphenaar, B. W. Alphenaar, B. Alphenaar
Affiliation
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY, USA
Topic
Gallium Nitride,Flexible Modes,Heterostructures,In-plane Mode,Resonance Frequency,Young’s Modulus,Aluminum Nitride,Dry Etching,High Electron Mobility Transistors,Resonant Behavior,Resonant Frequency Of Mode,Si Substrate,Silicon Carbide,Tensile Stress,Thermal Expansion,X-ray Exposure,X-ray Irradiation,3D Nanostructures,Blue Laser,Buffered Oxide Etchant,Charge Generation,Charge Trapping,Compressive Stress,Damaging Effects,Depletion Region,Displacement Damage,Drain Current,Effective Screening,Effects Of Radiation,Electron Beam Evaporation,Electron Beam Lithography,Electron Hole Pairs,Excellent Mechanical Properties,Finite Element Method,Free-standing Membranes,Frequency Shift,Fundamental Resonance,GaN HEMT,GaN Layer,Gas Molecules,Gauge Factor,Generate Electron Hole Pairs,Glancing Angle Deposition,Heat Sink,High Levels Of Stress,High Radiation,Hydraulic Diameter,Impedance,Ion-induced Damage,Ionization Energy,
Biography
Bruce W. Alphenaar (Member, IEEE) received the B.S. degree in physics from the Trinity College, CT, in 1984, and the Ph.D. degree in applied physics from Yale University in 1991. Starting from 1991, he worked for two years at Philips Research, Eindhoven, The Netherlands, and for eight years at the Hitachi Cambridge Laboratory in collaboration with Hitachi, Japan, and the Cavendish Physics Laboratory, Cambridge University, U.K. Then, he joined the faculty of the Electrical and Computer Engineering Department, University of Louisville, where he became a Professor in 2007. He has extensive research experience in micro/nano technology and has published over 150 research articles. He holds eight U.S. and European patents.