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Hiroshi Ishikawa
Also published under:H. Ishikawa
Affiliation
Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan
Topic
Single-mode Fiber,Fabrication Process,Finite-difference Time-domain,Optical Coupling,Bragg Grating,CW Operation,Characteristic Temperature,Chemical Vapor Deposition,Conditioning Pulse,Continuous Wave,Coupling Loss,Current Threshold,Deposit Ratio,Deposition Time,Device Structure,Distributed Feedback,Distributed Feedback Laser,Easy Installation,Electric Dipole Moment,Epitaxial,Etching Rate,Etching Time,Fiber Sensor,Fiber Surface,Figure Of Merit,Gold Nanoparticles,Grating,High Performance,High-temperature Stability,Hydrofluoric Acid,Input Light,Input State,Inverse Design,Localized Plasmon,Localized Surface Plasmon Resonance,Longer Wavelengths,Low Loss,Low-power Switching,Metal Film,Mode Fiber,Molecular Beam Epitaxy,Multi-core,Narrow Stopband,Optical Circulator,Optical Fiber,Optical Interconnects,Optical Sensors,Optical Switching,Optical System,Plasmon Absorption,
Biography
Hiroshi Ishikawa (SM'94–F'02) received B.S. degree in 1970 and M.S. degree in 1972 both from Tokyo Institute of Technology, Tokyo, Japan, and the Dr. Eng. Degree from Tokyo Institute of Technology, Japan, in 1984.
He joined Fujitsu Laboratories Ltd. in 1972. In Fujitsu Labs., he engaged in the research and development of optical semiconductor devices. He invented and developed a Fabry-Perot laser named VSB laser used in TPC-3 undersea cable systems and many trunk lines. He developed DFB lasers including modulator integrated DFB lasers for high bit-rate systems and tunable narrow linewidth DFB lasers for coherent communication systems. He proposed the use of InGaAs substrate for temperature robust 1.3 $\mu$m lasers, developed the bulk InGaAs growth technology and demonstrated high T0 lasers. He also worked for quantum dot lasers and nonlinear optical devices based on the quantum nano-structures. Since 2001, he engaged in the research and development of ultrafast optical switches based on optical non-linearity of quantum nano-structures and organic materials at The Femotosecond Technology Research Association. In 2004, he moved to National Institute of Advanced Industrial Science and Technology (AIST), and he is now working for low-energy consuming networks and devices as director of Network Photonics Research Center.
Dr. Ishikawa is a member of the Japan Society of Applied Physics (Fellow), the Physical Society of Japan, and the Institute of Electronics, Information and Communication Engineers.
He joined Fujitsu Laboratories Ltd. in 1972. In Fujitsu Labs., he engaged in the research and development of optical semiconductor devices. He invented and developed a Fabry-Perot laser named VSB laser used in TPC-3 undersea cable systems and many trunk lines. He developed DFB lasers including modulator integrated DFB lasers for high bit-rate systems and tunable narrow linewidth DFB lasers for coherent communication systems. He proposed the use of InGaAs substrate for temperature robust 1.3 $\mu$m lasers, developed the bulk InGaAs growth technology and demonstrated high T0 lasers. He also worked for quantum dot lasers and nonlinear optical devices based on the quantum nano-structures. Since 2001, he engaged in the research and development of ultrafast optical switches based on optical non-linearity of quantum nano-structures and organic materials at The Femotosecond Technology Research Association. In 2004, he moved to National Institute of Advanced Industrial Science and Technology (AIST), and he is now working for low-energy consuming networks and devices as director of Network Photonics Research Center.
Dr. Ishikawa is a member of the Japan Society of Applied Physics (Fellow), the Physical Society of Japan, and the Institute of Electronics, Information and Communication Engineers.