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Dong-Hoon Jang
Also published under:Dong Hoon Jang
Affiliation
Telecommunication R&D Center, Samsung Electronics Company Limited, Suwon, South Korea
Department of Electrical & Electronic Engineering, Yonsei University, Seoul, South Korea
Department of Electrical & Electronic Engineering, Yonsei University, Seoul, South Korea
Topic
Amplified Spontaneous Emission,Distributed Feedback,Antireflection,Beampattern,Bit Error Rate,Diode Laser,Direct Coupling,Fabrication Process,Gain Saturation,Input Power,Insertion Loss,Optical Amplifier,Optical Networks,Optical Power,Optical Signal,Output Power,Passive Network,Visual Feedback,Waveguide,Additional Costs,Additional Devices,Amount Of Power,Auger Recombination,Baseband Signal,Bimolecular Recombination,Bragg Grating,Carrier Density,Cavity Length,Chip Fabrication,Cladding Layer,Constant Phase,Coupling Constant,Coupling Efficiency,Coupling Length,Coupling Loss,Crosstalk,Crystal Structure,Current Layer,Design Parameters,Digital Signal,Direct Modulation,Distributed Feedback Laser,Downstream Signaling,Dry Etching,Electron Beam Lithography,External Cavity,Eye Diagrams,Far-field,Fiber Coupler,Gigabit Ethernet,
Biography
Dong-Hoon Jang was born in Kangneung, Korea, in 1960. He received B.S. degree from Seoul National University, Seoul, Korea, in 1983, and Ph.D. degree in materials science from Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, in 1988.
He was a Senior Engineer with the Electronics and Telecommunication Research Institute (ETRI), Daejon, from 1988 to 2000, where he was responsible for the development of GaInAsP-InP optoelectronics devices. His interests included epitaxial growth, fabrication of semiconductor lasers, and characteristics of modules for transmission. He was a Visiting Scientist with Sophia University, Tokyo, Japan in 1991, where he worked on visible semiconductor lasers using GSMBE. In 2000, he joined Samsung Electronics Optoelectronics Division, Suwon, Korea, as the Manager of R&D group. His research interests include high speed optoelectronic semiconductor devices and integrated modules for optical fiber communications.
He was a Senior Engineer with the Electronics and Telecommunication Research Institute (ETRI), Daejon, from 1988 to 2000, where he was responsible for the development of GaInAsP-InP optoelectronics devices. His interests included epitaxial growth, fabrication of semiconductor lasers, and characteristics of modules for transmission. He was a Visiting Scientist with Sophia University, Tokyo, Japan in 1991, where he worked on visible semiconductor lasers using GSMBE. In 2000, he joined Samsung Electronics Optoelectronics Division, Suwon, Korea, as the Manager of R&D group. His research interests include high speed optoelectronic semiconductor devices and integrated modules for optical fiber communications.