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S. C. Auzanneau
Also published under:S. -C. Auzanneau, S. Auzanneau
Affiliation
Thales Research and Technology, Orsay, Cedex-France
ETSI Telecomunicacion. Univ. Politécnica de Madrid, Ciudad Universitaria s/n, Madrid, España
Thales Research and Technology, Madrid, Cedex-France
Schoolof Electrical and Electronic Engineering, University of Nottingham, Nottingham, UK
ETSI Telecomunicacion. Univ. Politécnica de Madrid, Ciudad Universitaria s/n, Madrid, España
Thales Research and Technology, Madrid, Cedex-France
Schoolof Electrical and Electronic Engineering, University of Nottingham, Nottingham, UK
Topic
Beam Quality,Cylindrical Lens,Diode Laser,Output Power,External Cavity,Filamentation,Laser Array,Noise Figure,Optical Amplifier,Pump Source,Vertical Direction,Astigmatism,Beampattern,Cavity Length,Electromagnetic Field,Focal Length,High Brightness,High Numerical Aperture,Numerical Aperture,Optical Power,Output Coupler,Pump Laser,Thermal Equation,980-nm Laser,Active Region,Back Face,Beam Divergence,Beam Properties,Bitrate,Bragg Reflector,Broadband Characteristics,Calibration Procedure,Carrier Density,Central Wavelength,Change In Wavelength,Cladding Layer,Clarinet,Combined Beam,Conventional Laser,Conversion Efficiency,Cost Reduction,Coupling Efficiency,Device Length,Epitaxial Structure,Far-field,Free Charge Carriers,Front Face,Gain Bandwidth,Gain Spectrum,Good Qualitative Agreement,
Biography
Sophie-Charlotte Auzanneau was born in 1974 in France. She received the M.S. degree from the Ecole Nationale Supérieure de Physique Marseille, France, in 1998, and the Ph.D. degree in optoelectronics from the University of Paris XI, Paris, France, in 2002.
Presently she is Member of Technical Staff at THALES Research and Technology, Domain de Corbeville, France, working on high-power laser diodes.
Presently she is Member of Technical Staff at THALES Research and Technology, Domain de Corbeville, France, working on high-power laser diodes.