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Frédéric Aniel
Also published under:F. Aniel, Frederic Aniel
Affiliation
Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, France
Topic
Substrate Integrated Waveguide,Attenuation Constant,Dielectric Constant,Low Loss,Metal Layer,Return Loss,Back-end-of-line,Bipolar Transistor,CMOS Technology,Carrier Frequency,Center Frequency,Circuit Design,Complex Impedance,Conductor-backed Coplanar Waveguide,Coplanar Waveguide,EM Simulation,Electromagnetic Simulation,Equivalent Circuit,Fabrication Process,Filter Design,Frequency Range,Frequency Shift,Gold Layer,Ground Plane,High Performance,High-definition Video,In-line Filter,Inner Wall,Insertion Loss,Ion Beam Etching,Leaky-wave Antenna,Lens Antenna,Lower Plane,Metallic Vias,Modulation Frequency,Network Bandwidth,Optical Profilometer,Output Impedance,Packaging Technology,Passive Circuit,Power Divider,Printed Circuit Board,Propagation Constant,Propagation Mode,Quality Factor,Radiation Pattern,Rectangular Waveguide,Short-circuit,Sidelobe Level,Simulation Results,
Biography
Frédéric Aniel (M'00) received the Ph.D. degree from Université Paris Sud (UPS), Orsay, France in 1994.
He worked on device development at France-Telecom CNET in 1995. He is currently a Professor at UPS, and currently heads an IEF research team on the analysis of physical phenomena in very-high-frequency devices. His research activities are mainly on heterojunction transistor physics based on III-V or SiGe materials, with emphasis on device high frequency and optical characterizations both at 300 K and at low temperatures supported by physical and electrical modeling.
He worked on device development at France-Telecom CNET in 1995. He is currently a Professor at UPS, and currently heads an IEF research team on the analysis of physical phenomena in very-high-frequency devices. His research activities are mainly on heterojunction transistor physics based on III-V or SiGe materials, with emphasis on device high frequency and optical characterizations both at 300 K and at low temperatures supported by physical and electrical modeling.