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Mostafa Fedawy
Also published under:M. Fedawy
Affiliation
Center of Excellence in Nanotechnology, AASTMT., Cairo, Egypt
Faculty of Engineering, AASTMT, Cairo, Egypt
Faculty of Engineering, AASTMT, Cairo, Egypt
Topic
Work Function,Electron Affinity,Energy Band,Absorber Layer,Band Offset,Depletion Region,Design Parameters,Dielectric Constant,Double-gate,Electrostatic Potential,Gate Electrode,Open-circuit Voltage,Solar Cells,Tandem Cells,Tunnel Junction,130-nm CMOS,Absorber Thickness,Ambipolar Conduction,Band Diagram,Band Gap,Barrier Height,CMOS Power Amplifier,CMOS Technology,Cadence,Carrier Mobility,Channel Length,Charge Mobility,Charge Transport Layers,Charged Channel,Chemical Vapor Deposition,Comparative Simulation,Complex Refractive Index,Compression Point,Conduction Band,Conversion Efficiency,Coupling Coefficient,Crossover Process,Crosstalk,Crystalline Silicon,Current Matching,Current Ratio,Data Streams,Depletion Width,Device Structure,Dielectric Layer,Dielectric Thickness,Doped Layer,Doping Concentration,Drain Electrodes,Dynamic Resistance,
Biography
Mostafa Fedawy was born in Alexandria, Egypt. He received the B.Sc. and M.Sc. degrees from the Electronics and Communications Department, College of Engineering and Technology, Arab Academy for Science and Technology and Maritime Transport, Egypt, in 2001 and 2006, respectively, and the Ph.D. degree in the field of devices and nanotechnology from Ain Shams University, Egypt, 2013.
He is currently an Associate Professor with the Electronics and Communications Department, College of Engineering and Technology, Arab Academy for Science and Technology and Maritime Transport. His research interests include photovoltaic devices, sensors, and simulation and modeling of nanoscale devices, including graphene transistors, TFETs, and CNTFETs.
He is currently an Associate Professor with the Electronics and Communications Department, College of Engineering and Technology, Arab Academy for Science and Technology and Maritime Transport. His research interests include photovoltaic devices, sensors, and simulation and modeling of nanoscale devices, including graphene transistors, TFETs, and CNTFETs.