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G. A. Armstrong
Also published under:G. Alastair Armstrong
Affiliation
Semiconductors and Nanotechnology Centre, Queen's University Belfast, Belfast, UK
Topic
Drain Current,Gate Length,Double-gate,Performance Metrics,Advanced Design System,Device Parameters,Drain Bias,Field-effect Transistors,Film Thickness,Gate Oxide,Impact Ionization,Low-noise Amplifier,Noise Figure,Power Consumption,Silicon-on-insulator,Sweet Spot,Transconductance,Ultra-low Power,Voltage-gated,Accumulation Mode,Band Gap,CMOS Technology,Capacitance Ratio,Carbon Nanotubes,Center Of The Film,Circuit Simulation,Contact Resistance,Current Ratio,Depletion Region,Dominant Path,Doping Concentration,Doping Profile,Double Configuration,Downscaling,Dual Band,Dynamic Power,Electronic Absorption,Forward Bias,Frequency Band,Frequency Of Interest,Frequency Power,GHz Band,Gate Bias,Gate Structure,Graphene Nanoribbons,High Current Levels,High Ratio,Hole Accumulation,Improvement In Gain,Increase In Values,
Biography
G. Alastair Armstrong received the Ph.D. degree from Queen's University Belfast, Belfast, U.K., in 1971.
He is Professor of Electronic Engineering, Queen's University, Belfast, U.K., and has more than 25 years experience in simulation and design of semiconductor devices and circuits. He is a member of staff of the Northern Ireland Semiconductor Research Centre and leads the semiconductor device simulation research group. He has also worked as a consultant to several electronics companies. Over the course of his career he has published two research textbooks and more than 150 journal and conference papers on topics involving semiconductor devices, signal processing and medical electronics. He has been awarded more than 12 research grants and his major research interest has been in semiconductor device simulation for silicon technologies. His current research interest is in the device and circuit simulation of silicon on insulator technologies for nanoelectronics.
He is Professor of Electronic Engineering, Queen's University, Belfast, U.K., and has more than 25 years experience in simulation and design of semiconductor devices and circuits. He is a member of staff of the Northern Ireland Semiconductor Research Centre and leads the semiconductor device simulation research group. He has also worked as a consultant to several electronics companies. Over the course of his career he has published two research textbooks and more than 150 journal and conference papers on topics involving semiconductor devices, signal processing and medical electronics. He has been awarded more than 12 research grants and his major research interest has been in semiconductor device simulation for silicon technologies. His current research interest is in the device and circuit simulation of silicon on insulator technologies for nanoelectronics.