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Michael L. Alles
Also published under:M. L. Alles, Mike Alles, M. Alles, M. A. Alles, Michael A. Alles, Micheal L. Alles, Michael Alles
Affiliation
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
Topic
Charge Trapping,Irradiation,Threshold Voltage,Bias Conditions,Dose Concentration,Gate Dielectric,Power Devices,Radiation Tolerance,Silicon Carbide,Silicon-on-insulator,Voltage-gated,Effects Of Radiation,Gate Oxide,Heavy Ions,Ionizing Radiation,Irradiation Device,Low-frequency Noise,Measurement Noise,Normal Incidence,Positively Charged,Schottky Diode,Threshold Voltage Shift,Application Of Bias,Bias Voltage,Bipolar Transistor,Bottom Layer,Charge Density,Circuit Simulation,Conduction Band,Cross-sectional,Cumulative Density Function,Current Increases,Device Layer,Electron Hole Pairs,Energy Distribution,Frequency Dependence,Fully Depleted Silicon On Insulator,Gallium Nitride,Hole Trapping,Interface Trap,Linear Energy Transfer,Low Voltage,Magnitude Of Noise,Memory Devices,Memory Window,Microelectromechanical System Resonator,Negative Bias,Negative Shift,Net Positive Charge,Noise Power Spectral Density,
Biography
Dr. Michael Alles is a Research Associate Professor in the Electrical Engineering Department and the Program Manager for Commercial Systems with Vanderbilt University's Institute for Space and Defense Electronics (ISDE) where he works in the area of radiation effects in microelectronics. He spent 2 years as a Business Unit Director for Silvaco International, 10 years with Ibis Technology Corporation in product development and program management, and 1 year with Harris Semiconductor as a design engineer. Dr. Alles has a strong background in semiconductor technology, including manufacturing and metrology, computer-aided design tools for semiconductor fabrication processes, devices, and integrated circuitdesign, and expertise in modeling and simulation ofradiation effects in semiconductor devices and circuits. Dr. Alles has served on the SIA ITRS starting materials working group since 1999, serving as chairman of the SOI materials group for the 2001 revision of ITRS, and has been a reviewer for Transactions on Nuclear Science several times. He has over 40 technical/trade publications and 2 patents. Dr. Alles received his Ph.D. in Electrical Engineering (12/92), MS. in Electrical Engineering (8/90), and his B.E. in Electrical Engineering with a Double Major in Physics(5/87) all from Vanderbilt University. Dr. Alles' present research focus is in the application ofadvancedand emerging semiconductor technologies in radiation environments.