Featured Authors

Jonghyun Ahn

Memory Division, Samsung Electronics, Hwaseong, South Korea

Sung-Gi Ahn

Memory Division, Samsung Electronics, Hwaseong, South Korea

Sungoh Ahn

Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea

Junhyun Chun

SK hynix inc.

A. Athmanathan

IBM Research, Rüschlikon, Switzerland

Changyong Ahn

SK Hynix Semiconductor, Icheon, Korea

Yong-Tak Lee

GIST, School of Electrical Engineering and Computer Science, Gwangju, Republic of Korea

Muhammad Imran Afzal

School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju, Korea

Siti Anom Ahmad

Faculty of Engineering, Universiti Putra Malaysia (UPM), Serdang, Selangor, Malaysia

Salmiah Ahmad

College of Engineering and Technology, University of Doha for Science and Technology, Doha, Qatar