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Welcome
Welcome to the IEEE Symposium on 3D User Interfaces 2017 (3DUI 2017), taking place in Los Angeles, California, on March 18th–19th, 2017.
Contents
Presents the table of contents/splash page of the proceedings record.
Author index
Presents an index of the authors whose articles are published in the conference proceedings record.
[Front cover]
The following topics are dealt with: 3D user interfaces; virtual reality; virtual assistants; 3D user interaction; passive haptics; walking; 3D gesture recognition; augmented reality; and 3D navigation.
Impact of Cu Pad Density on Cu-CMP and Bonding Yield for Chip-to-Wafer Hybrid Bonding
The role of metal density around fiducial marks (used for chip alignment) on the quality of chemical-mechanical-planarization (CMP) of Cu bond-pads/electrodes has been meticulously studied via two different layout designs. A gradual increas...
Creep Behavior of Low-Temperature Sn-In Solder Using Nanoindentation Test
Low-temperature solders are required in three-dimensional integrated circuit (3D ICs) to reduce heat input during soldering and for stacking. Sn-52mass%In alloys (Sn-In alloys) is promising because it has a melting point of 119 °C. However,...
Thermal Analysis of Reflow Process for PIC-Embedded Package Substrate with 2.3D RDL Interposer for Co-Packaged Optics
Toward a next generation co-packaged optics (CPO), we have worked on a novel package substrate in which photonics integrated circuits (PICs) are embedded. The substrate can be provided as known good package substrate with optoelectronic con...
3D SRAM Design & Optimization with Open Source Memory Compiler
As the prevalence of AI and big data computing, memory is becoming a performance bottleneck. 3D memory stacking is proposed to deal with this problem. However, memory physical design is a labor-intensive procedure. To the best of our knowle...
Surface Modification for Ultrasonic Cu-to-Cu Direct Bonding
Due to the advantages of low electrical resistance and size miniaturization, Cu-to-Cu direct bonding has become one of the important trends in microelectronic interconnect fabrication. Achieving robust Cu-to-Cu bonding at low temperature, a...
Gate Driver IC for GaN Power Device Suitable for 3D Power IC
This electronic document is three-dimensional(3D) power IC, which GaN power devices stacked with Si based gate driver IC, is attractive. There is a problem of false turn-on for GaN power devices. The one of the promising candidates for solv...